Published June 2000
| public
Book Section - Chapter
Analysis and Design of Silicon Bipolar Distributed Oscillators
- Creators
-
Hajimiri, Ali
- Wu, Hui
Abstract
A systematic approach to design of silicon bipolar distributed oscillators and voltage-controlled oscillators (VCOs) is presented. The operation of the distributed oscillators is analyzed and the general condition for oscillation is derived, resulting in analytical expressions for the frequency and amplitude of the distributed oscillators. Special attention is paid to transmission line modeling that largely determines the performance of the distributed oscillators. A distributed VCO operating at 12 GHz dissipating 13 mW of power is demonstrated. The VCO has a tuning range of 26% with a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier. A second design shows a 17 GHz bipolar distributed oscillator, which dissipates 9 mW of power.
Additional Information
© 2000 IEEE. Date of Current Version: 06 August 2002. The authors would like to thank Lee Center for Advanced Networking for partial support and Conexant Systems for chip fabrication. We are also deeply indebted to Lawrence Cheung of Caltech for help with HFSS simulation of the transmission lines.Additional details
- Eprint ID
- 28289
- DOI
- 10.1109/VLSIC.2000.852863
- Resolver ID
- CaltechAUTHORS:20111205-084201864
- Caltech Lee Center for Advanced Networking
- Created
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2011-12-05Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 6715274