Concurrent Dual-Band CMOS Low Noise Amplifiers and Receiver Architectures
- Creators
- Hashemi, Hossein
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Hajimiri, Ali
Abstract
A new concurrent dual-band receiver architecture is introduced that is capable of simultaneous operation at two different frequency bands. The concurrent operation results in higher bandwidth, lower total power dissipation and less sensitivity to channel variations. The architecture uses a novel concurrent dual-band low noise amplifier (LNA), combined with an elaborate frequency conversion scheme to reject the image bands. A general methodology for the design of concurrent LNAs is provided that makes it possible to achieve simultaneous narrowband gain and matching at multiple frequencies. The methodology is demonstrated by implementing an integrated dual-band concurrent LNA using 0.35 μm CMOS transistors. The LNA provides narrow-band gain and matching at 2.45 GHz and 5.25 GHz bands, simultaneously. It drains 4 mA of current and achieves voltage gains of 14 dB and 15.5 dB, input return losses of 25 dB and 15 dB, and noise figures of 2.3 dB and 4.5 dB at these two bands, respectively.
Additional Information
© 2001 IEEE. Date of Current Version: 07 August 2002. The authors would like to thank members of Caltech Microelectronics and Microwave groups, particularly, I. Aoki, H. Wu, L. Chung, and S. Kee for assistance with measurements. We also thank Conexant Systems for chip fabrication, specially R. Magoon, F. Int'veld, and R. Hlavac. We appreciate helpful technical discussions with S. Weinreb of JPL, H. Samavati of Stanford University, and Y. Cheng of Conexant Systems.Additional details
- Eprint ID
- 27835
- Resolver ID
- CaltechAUTHORS:20111117-120951431
- Created
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2011-11-17Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 7081239