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Published October 2004 | public
Book Section - Chapter

A 24GHz, +14.5dBm Fully-Integrated Power Amplifier in 0.18µm CMOS

Abstract

A 24 GHz, +14.5 dBm fully-integrated power amplifier with 50 Ω input and output matching is fabricated using 0.18 μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5 dBm with a 3 dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8 V supply. The chip area is 1.26 mm^2.

Additional Information

© 2004 IEEE. Issue Date: 3-6 Oct. 2004. Date of Current Version: 22 November 2004. The authors would like to thank A. Natarajan, H. Hashemi, M. Morgan, E. Afshari, N. Wadefalk and A. Shen of Caltech for their assistance. The technical support for CAD tools from Agilent Technologies and Zeland Sohare, Inc. is also appreciated.

Additional details

Created:
August 19, 2023
Modified:
October 24, 2023