Published September 2010
| Published
Journal Article
Open
A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications
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1.
California NanoSystems Institute
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2.
California Institute of Technology
Chicago
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Abstract
A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10^4, a read window of about 2.5 V, and retention performance of greater than 10^4 s. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.
Additional Information
© 2010 IEEE. Manuscript received May 17, 2010; accepted May 26, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the FCRP-FENA Center. The review of this letter was arranged by Editor T. Wang.Attached Files
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Additional details
- Eprint ID
- 20741
- Resolver ID
- CaltechAUTHORS:20101110-110530178
- Focus Center Research Program-The Center on Functional Engineered Nano Architectonics Center (FENA-FCRP Center)
- Created
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2010-11-11Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 11477412