A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

Abstract

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10^4, a read window of about 2.5 V, and retention performance of greater than 10^4 s. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

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