Electronic structure and transport in thermoelectric compounds AZn_2Sb_2 (A = Sr, Ca, Yb, Eu)

Abstract

The AZn_2Sb_2 (P¯3m1, A = Ca, Sr, Eu, Yb) class of Zintl compounds has shown high thermoelectric efficiency (zT ~ 1) and is an appealing system for the development of Zintl structure–property relationships. High temperature transport measurements have previously been conducted for all known compositions except for SrZn_2Sb_2; here we characterize polycrystalline SrZn_2Sb_2 to 723 K and review the transport behavior of the other compounds in this class. Consistent with the known AZn_2Sb_2 compounds, SrZn_2Sb_2 is found to be a hole-doped semiconductor with a thermal band gap ~ 0.27 eV. The Seebeck coefficients of the AZn2Sb2 compounds are found to be described by similar effective mass (m* ~ 0.6 m_e). Electronic structure calculations reveal similar m* is due to antimony p states at the valence band edge which are largely unaffected by the choice of A-site species. However, the choice of A-site element has a dramatic effect on the hole mobility, with the room temperature mobility of the rare earth-based compositions approximately double that found for Ca and Sr on the A site. This difference in mobility is examined in the context of electronic structure calculations.

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