Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits
Abstract
A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time.
Additional Information
© Copyright 2009 IEEE. Manuscript received September 12, 2008; revised December 18, 2008. First published May 02, 2009; current version published June 10, 2009. This work was supported by the National Science Foundation under Project ECCS 0802178.Attached Files
Published - Rabieirad2009p4779Ieee_T_Microw_Theory.pdf
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Additional details
- Eprint ID
- 15484
- Resolver ID
- CaltechAUTHORS:20090831-111245582
- ECCS 0802178
- NSF
- Created
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2009-09-14Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field