A 0.1–5 GHz Cryogenic SiGe MMIC LNA
- Creators
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Bardin, Joseph C.
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Weinreb, Sander
Abstract
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T_e) of 76 K (NF = 1 dB) and S11 of -9 dB for frequencies in the 0.1-5 GHz band. At 15 K, the amplifier has greater than 29.6 dB of gain with an average Te of 4.3 K and S11 of -14.6 dB for frequencies in the 0.1-5 GHz range. To the authors' knowledge, this is the lowest noise ever reported for a silicon integrated circuit operating in the low microwave range and the first matched wideband cryogenic integrated circuit LNA that covers frequencies as low as 0.1 GHz.
Additional Information
© Copyright 2009 IEEE. Manuscript received December 17, 2008; revised March 10, 2009. First published May 27, 2009; current version published June 05, 2009. This work was supported in part by the Directors Fund of the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration, and by IBM under the TAPO Program. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. The authors wish to thank Dr. D. Rutledge, Dr. A. Hajimiri, G. Jones, H. Mani, A. Babakhani, F. Bohn, H. Wang, and Y. Wang, for their help, and Dr. K. Johnson, USNO, for his sponsorship.Attached Files
Published - Bardin2009p4705Ieee_Microw_Wirel_Co.pdf
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Additional details
- Eprint ID
- 14999
- Resolver ID
- CaltechAUTHORS:20090812-181721393
- JPL
- IBM
- Created
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2009-09-04Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field